Building programmable integrated circuits through disordered Chern insulators

We study the construction of programable integrated circuits with help disordered Chern insulators. Specifically, schemes for low dissipation logic devices and connecting wires are proposed. use external-gate-induced step voltage to construct spatially adjustable channels, where these channels take place conventional wires. Our numerical calculation manifests that external gates can be adopted program arbitrary number ($n$-to-$m$ connections). find their electron transport is dissipationless robust against gate fluctuation disorder strength. Furthermore, seven basic distinct from structures proposal has potential applications in power-integrated enlightens building topological materials.